Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
This paper presents a systematic empirical study of high-performance GeSn photodiodes with thick absorbers (up to 2630 nm) and varying tin content (2–8%), demonstrating high responsivity and extended SWIR detection capabilities while analyzing the impact of doping design and defects to propose optimization strategies for commercial-grade devices.