Spatiotemporal programming via asymmetric dielectric engineering for nonvolatile 2D optoelectronics

This paper presents a spatiotemporal programming strategy using an asymmetric dielectric stack in a dual-floating-gate architecture to enable single-gate-controlled, nonvolatile, and reversible switching between p-n and n-p junction polarities in ambipolar 2D semiconductors, thereby facilitating high-density, multifunctional intelligent hardware.

Original authors: Xiaoguang Luo, Xiaolong Zhang, Honglei Chen, Jiaming Wang, Fan Liu, Jiongtao Zhang, Junqiang Zhang, Yihan Yin, Jinpeng Xu, Lei Ying, Renjing Xu, Yingchun Cheng, Xuetao Gan, Wei Huang