🔬 materials science
Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
This paper utilizes ab initio calculations to propose a universal kinetic model for the growth of III-V tetrahedral semiconductors on polar surfaces, demonstrating that stable gallium-based pyramids can only be incorporated into crystal steps through the mediation of additional nonmetal "glue" atoms.
Original paper licensed under CC BY 4.0 (http://creativecommons.org/licenses/by/4.0/). This is an AI-generated explanation of the paper below. It is not written or endorsed by the authors. For technical accuracy, refer to the original paper. Read full disclaimer
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