Van der Waals Epitaxial InSe Thin Films for High-Mobility Two-Dimensional Transistors
This paper demonstrates the successful growth of high-mobility, phase-pure InSe thin films on hexagonal boron nitride via van der Waals epitaxy, achieving a peak field-effect mobility of approximately 4,000 cm²/Vs through optimized molecular beam epitaxy conditions that ensure atomically abrupt interfaces and intrinsic phonon-limited transport.
Original paper licensed under CC BY 4.0 (https://creativecommons.org/licenses/by/4.0/). This is an AI-generated explanation of the paper below. It is not written or endorsed by the authors. For technical accuracy, refer to the original paper. Read full disclaimer
Drowning in papers in your field?
Get daily digests of the most novel papers matching your research keywords — with technical summaries, in your language.